GP10 InGas PIN Diode Detector
January 10, 2024
GP15 InGas PIN Diode Detector
January 10, 2024
GP30 Bi-directional Pin Diode Laser Module
Features
> MQW DFB LD
> Low threshold current
> High output power
> Built-in InGaAsP monitor PD
> Wide temperature range operation (Tc=-40℃ to +85℃)
Absolute maximum ratings
| Parameter | Symbol | Min. | Max. | Unit | Test condition |
| Storage temperature | Tst | -40 | +100 | °C | – |
| Operating temperature | Top | -40 | +85 | °C | – |
| Reverse voltage | VR | 2 | V | CW | |
| Soldering temperature/time | 260/10 | °C/S | – |
Optical & electrical characteristics
> 1610nm
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Center wavelength | λc | 1607 | 1610 | 1613 | nm | 25°C |
| Threshold current | Ith | – | 5 | 15 | mA | 1610nm, 25°C |
| Spectral width | Δλ | – | 1 | 2 | nm | CW, Ith + 20mA |
| Output power | P | – | 2 | mW | CW, Ith + 30mA | |
| Rise / Fall time | Tr / Tf | – | 0.3 | 0.7 | nS | CW |
| Monitor current | Im | 0.1 | 0.7 | mA | CW | |
| Optical Isolation | Iso | 30 | – | – | dB |
> 1550nm
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Detection range | λ | 1100 | – | 1650 | nm | – |
| Dark current | Id | – | 1 | 5 | nA | VR=5V, 25°C |
| Quantum efficiency | R | – | 0.85 | – | A/W | VR=5V, λ=1550nm |
| Saturation power | P | 10 | – | – | dBm | VR=5V, 25°C |
| Rise and Fall time | Tr / Tf | – | 0.1 | – | ns | RL=50Ω |
| Reverse Voltage | VR | – | – | 15 | V | – |
| Capacitance | Ct | – | – | 0.75 | pF | VR=5V |
