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Features
> MQW DFB LD
> Low threshold current
> High output power
> Built-in InGaAsP monitor PD
> Wide temperature range operation (Tc=-40℃ to +85℃)
Absolute maximum ratings
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
| Saturation power | Ps | 3 | – | – | dBm |
| Forward current | If | – | – | 10 | mA |
| Reverse voltage | Vr | – | – | 15 | V |
| Operating case temperature | Top | -40 | – | +85 | ºC |
| Storage temperature | Tstg | -40 | – | +85 | ºC |
| Lead soldering (temperature /time) | – | – | 260/ 10 or 360/5 | – | ºC/Sec |
Optical & electrical characteristics
| Parameter | Symbol | Min | Typ. | Max | Unit | Test condition |
| Transmission working wavelength | λ1 | 1540 | – | 1650 | nm | |
| Reflected working wavelength | λ2 | 1260 | – | 1550 | nm | |
| λ3 | 1575 | – | 1580 | nm | ||
| Dark current | Id | – | – | 1 | nA | Vr=5V |
| Responsivity | R | 0.90 | – | – | A/W | Vr=5V,λ=1550nm, Po=0dBm |
| Optical return loss | RL | 40 | – | – | dB | λ= 1550nm, Po=0dBm |
| Transmission isolation | ISO1 | 35 | – | – | dB | λ= 1310nm |
| Transmission isolation | ISO2 | 30 | – | – | dB | λ=1577nm & 1490nm |
| Reflection isolation | ISO2 | 18 | – | – | dB | λ= 1550nm |
| Reflection insertion loss | IL | – | – | 0.7 | dB | λ= 1310nm & 1490nm |
